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| inchange semiconductor product specification silicon pnp power transistors 2sb1604 2SB1604A description ? with to-220f package ? low collector saturation voltage ? high speed switching applications ? for low-voltage switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit 2sb1604 -40 v cbo collector-base voltage 2SB1604A open emitter -50 v 2sb1604 -20 v ceo collector-emitter voltage 2SB1604A open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -20 a t a =25 ?? 2 p c collector dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2sb1604 2SB1604A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sb1604 -20 v (br)ceo collector-emitter breakdown voltage 2SB1604A i c =-10ma ;i b =0 -40 v v cesat collector-emitter saturation voltage i c =-10a ;i b =-0.33a -0.6 v v besat base-emitter saturation voltage i c =-10a ;i b =-0.33a -1.5 v i cbo collector cut-off current v cb =-40v; i e =0 -50 | a i ebo emitter cut-off current v eb =-5v; i c =0 -50 | a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe-2 dc current gain i c =-3a ; v ce =-2v 90 260 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 400 pf f t transition frequency i c =-0.5a ; v ce =-10v 100 mhz switching times t on turn-on time 0.1 | s t stg storage time 0.5 | s t f fall time i c =-3a; i b1 =-i b2 =-0.1a 0.1 | s ? h fe-2 classifications q p 90-180 130-260 inchange semiconductor product specification 3 silicon pnp power transistors 2sb1604 2SB1604A package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon pnp power transistors 2sb1604 2SB1604A |
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